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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.35 40 MAX. 700 700 400 9 8 16 80 2.0 120 UNIT V V V V A A W V ns
Tmb 25 C IC = 5.0 A;IB = 1.0 A IC = 5 A; IB1 = 1 A
PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO VEBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 9 8 16 4 8 80 150 150 UNIT V V V V A A A A W C C
Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.56 UNIT K/W K/W
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat hFE hFEsat PARAMETER Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A;IB = 0.4 A IC = 5.0 A;IB = 1.0 A IC = 5.0 A;IB = 1.0 A (TC = 100C) IC = 2.0 A;IB = 0.4 A IC = 5.0 A;IB = 1.0 A IC = 5.0 A;IB = 1.0 A (TC = 100C) IC = 2.0 A; VCE = 5 V IC = 5.0 A; VCE = 5 V MIN. 400 8 5 TYP. 0.15 0.35 0.51 0.92 1.05 1.00 17 9 MAX. 0.2 1.0 1.0 1.0 2.0 3.0 1.2 1.6 1.5 40 30 UNIT mA mA mA V V V V V V V
Base-emitter saturation voltage
DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 5 A; IBon = -IBoff = 1 A; RL = 75 ohms; VBB2 = 4 V; ICon = 5 A; IBon = 1 A; LB = 1 H; -VBB = 5 V ICon = 5 A; IBon = 1 A; LB = 1 H; -VBB = 5 V; Tj = 100 C TYP. MAX. UNIT s s s ns s ns
1.8 0.3
3.0 0.7
1.2 40
2.0 120
1.6 100
3.0 200
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
+ 50v 100-200R
IC
90 %
ICon
90 %
10 %
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
IB
ts ton toff IBon 10 % tr 30ns -IBoff
tf
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250
LC
IBon
100 10 0 VCE / V
LB T.U.T.
-VBB
min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
VCC
Fig.5. Test circuit inductive load. = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
VCEsat/V 2.0
1.6 IC=1A 1.2 2A 3A 4A
0.8
0.4
0
20
40
60
80 Tmb / C
100
120
140
0.0 0.01
0.10 IB/A
1.00
10.00
Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C.
HFE 50
VBESAT/V 1.4
30
Tj=100C
1.3
20
25C
1.2
15
1.1
-40C
10
1
0.9
5
-40C
0.8
25C
Tj=100C
0.7
2
VCE=1V
0.6
0.01
0.05
0.1
0.3 IC/A
1
2
3
5
10
0.5 0.1
0.5
1 IC/A
2
5
10
Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
HFE 50
VCESAT/V 0.6
30
Tj=100C
0.5
Tj=100C
20
25C
0.4
15
-40C
10
0.3
0.2
25C
5
-40C
VCE=5V
0.1
2 0.01
0.05
0.1
0.3 IC/A
1
2
3
5
10
0 0.2
0.4
0.6
1 IC/A
2
5
6
Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
10
Zth / (K/W)
IC/A 11
10
9
8
1 D= 0.5 0.2 0.1 0.05 0.02 0
7
6
5
0.1
P D
tp
D=
tp
-5V
4
-3V
T
3
T 0.01 1E-06 1E-04 1E-02 t/s
t 1E+00
2
-1V
1
0 0 100 200 300 400 500 VCEclamp/V 600 700 800
Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Fig.15. Reverse bias safe operating area (Tj < Tjmax) for -VBE = 5V,3V & 1V.
VCC
LC
IBon
VCL LB T.U.T.
-VBB
Fig.14. Test circuit for reverse bias safe operating area. Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H.
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.16. TO220AB; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
February 1999
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13007
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1999
7
Rev 1.000

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